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| PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HEP32 Series HEP32/HEP32A/HEP32B/HEP32C(c) APPLICATIONS MediuiPower Linear switching Applications. ABSOLUTE MAXIMUM RATINGS a=25ae(c) T TO-220AB T stg Storage Temperature----------55~150ae T j Junction Temperature------------150ae PCCollector Dissipation Tc=25ae ---------- (c) 40W PCCollector Dissipation Ta=25ae (c)----------2W VCBO Collector-Base Voltage CEOCollector-Emitter Voltage V 1D Base B HEP32-----------40V 2D Collector C HEP32A----------60V 3D Emitter E HEP32B-----------80V HEP32C----------100V VE B O Emitter -Base Voltage------------5V ICCollector CurrentDC(c)------------- DC(c)---------------3A ICCollector Current -3mA ICCollector Current Pulse(c)--------------5A Ib Current-----------------Base -1A ELECTRICAL CHARACTERISTICS a=25ae(c) T Symbol BVCEO Characteristics Collector-Emitter Breakdown Voltage Min Typ Max Unit V V V V mA mA |I A |I A |I A |I A Test Conditions IC=-30mA, IB=0 HEP32 - 40 HEP32A - 60 HEP32B - 80 HEP32C - 100 HEP31/ HEP32A HEP31B/ HEP32C HEP32 HEP32A HEP32B HEP32C 25 10 ICEO ICES Collector Cut-off Current Collector Cut-off Current - 0.3 - 0.3 - 200 - 200 - 200 - 200 50 HFE 1(c) HFE 2(c) VCE(sat) VBE(ON) IEBO fT *DC Current Gain *Collector- Emitter Saturation Voltage *Base-Emitter On Voltage Emitter Cut-off Current Current Gain-Bandwidth Product 3.0 - 1.2 - 1.8 -1 V V mA MHz VCB=-30V, IB=0 VCB=-60V, IB=0 VCE=-40V, VEB=0 VCE=-60V, VEB=0 VCE=-80V, VEB=0 VCE=-100V, VEB=0 VCE=-4V, IC=-1A VCE=-4V, IC=-3A IC=-3A, IB=-375mA VCE=-4V, IC=-3A VEB=-5V, IC=0 VCE=-10V, IC=-500mA f=1MHz *Pulse Test 300|I cycle PWU s Duty U 2% PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HEP32 Series HEP32/HEP32A/HEP32B/HEP32C(c) |
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